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Creators/Authors contains: "Yu, Shui-Qing"

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  1. ; ; ; ; ; ; ; ; ; ( , Applied Surface Science)
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  2. ; ; ; ; ; ; ( , Journal of Crystal Growth)
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  3. ; ; ; ; ; ; ; ( , Proceeding of Silicon Photonics)
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  4. ; ; ; ; ; ; ; ; ; ; et al ( , Scientific Reports)
    Abstract

    In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1−xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems.

     
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  5. ; ; ; ; ; ( , Physical Review B)
  6. ; ; ; ; ; ; ; ; ; ; et al ( , Optical Materials Express)
  7. ; ; ; ; ; ; ; ; ; ; et al ( , Optics Letters)
  8. ; ; ; ; ; ; ; ; ; ( , Optics Express)
  9. ; ; ; ; ; ; ; ; ; ; et al ( , Optics Letters)
  10. ; ; ; ; ; ; ; ; ; ; et al ( , Journal of Applied Physics)